Toshiba - 2SC5098-R

  1. Home
  2. Toshiba - 2SC5098-R
2SC5098-R by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC5098-R
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .015 A;
Datasheet 2SC5098-R Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 10000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .015 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN LEAD
No. of Terminals: 4
Maximum Power Dissipation (Abs): .1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 50
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 10 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .75 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MPS3640 by Central Semiconductor

MPS3640

Central Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .08 A;
BLF871 by Ampleon Netherlands B V

BLF871

Ampleon Netherlands B V

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Transistor Element Material: SILICON; Peak Reflow Temperature (C): NOT SPECIFIED;
MSC80186 by STMicroelectronics

MSC80186

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;
SS9018FBU by Onsemi

SS9018FBU

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;
BFS17 by Philips Components

BFS17

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1300 MHz; Maximum Collector Current (IC): .025 A; Qualification: Not Qualified;
BFT92W by Infineon Technologies

BFT92W

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;
CA3083Z by Renesas Electronics

CA3083Z

Renesas Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
2SC5501A-4-TR-E by Onsemi

2SC5501A-4-TR-E

Onsemi

RF Small Signal Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH; Peak Reflow Temperature (C): 260;
BFR193E6327HTSA1 by Infineon Technologies

BFR193E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .08 A;
934067694135 by NXP Semiconductors

934067694135

NXP Semiconductors

RF Small Signal Bipolar Transistors;
934047470135 by NXP Semiconductors

934047470135

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Package Style (Meter): SMALL OUTLINE;
BFQ256A-TAPE-7 by NXP Semiconductors

BFQ256A-TAPE-7

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .3 A; No. of Terminals: 4;
2N3571 by Texas Instruments

2N3571

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1500 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
BFR360FH6765XTSA1 by Infineon Technologies

BFR360FH6765XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Collector Current (IC): .035 A; Package Style (Meter): SMALL OUTLINE;
A5T4260 by Texas Instruments

A5T4260

Texas Instruments

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1.6 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .03 A;
2N5179 by STMicroelectronics

2N5179

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
CPH6021-TL-H by Onsemi

CPH6021-TL-H

Onsemi

CPH6021-TL-H by Onsemi is an NPN RF BJT with a max power dissipation of 0.7W, fT of 8000MHz, and hFE of 60. Ideal for applications requiring high-frequency signal amplification in surface-mount configurations.
BFS17W by Vishay Semiconductors

BFS17W

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;
MPS5179RLRAG by Onsemi

MPS5179RLRAG

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2N2222 by SPC TECHNOLOGY/ MULTICOMP

2N2222

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;