Infineon Technologies - BFP420H6433XTMA1

MMBTH10-7-F by Diodes Inc. is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for amplifier applications, it has a small outline package, operates up to 150°C, and features a max power dissipation of 0.3W.

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .135 W; Maximum Collector Current (IC): .04 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .15 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;

BFP640FH6327XTSA1 by Infineon Technologies is a NPN RF Small Signal BJT with 4 terminals, suitable for C Band applications. It has a max fT of 40 GHz, 0.05 A IC, and 4 V VCE. This transistor is designed for high-frequency amplifier circuits in automotive electronics.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; Package Body Material: METAL; JESD-30 Code: O-MBCY-W3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;

MMBTH10-4LT1G by Onsemi is an NPN RF BJT with a max. collector-emitter voltage of 25V and fT of 800MHz. Ideal for ultra-high frequency applications, it has a small outline package, matte tin finish, and operates up to 150°C.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Package Style (Meter): CYLINDRICAL; Terminal Form: THROUGH-HOLE;

NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .5 A; Qualification: Not Qualified; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .05 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Reference Standard: MIL-19500; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .3 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .025 A; Maximum VCEsat: .5 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;