Vishay Intertechnology - VEMT2520X01

SFH3100F by Infineon Technologies is a phototransistor with a peak wavelength of 920nm. It has a max operating temperature of 85°C and a min operating temperature of -40°C. This through-hole mount device is commonly used in applications requiring low dark current and a max on-state current of 0.05A.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: HIGH SENSITIVITY; Shape: ROUND; Maximum Power Dissipation: .15 W; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 880; Configuration: SINGLE; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Maximum Response Time: .000015 s;

QSD123.A4R0 by Qt Optoelectronics is a 5mm round phototransistor with max operating temp of 100°C and min of -40°C. It has nominal light current of 4mA, dark current of 100nA, and IR range. Ideal for applications requiring reliable photo detection in various temperature conditions.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .15 W; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PHOTO DARLINGTON; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 25 V; Nominal Light Current: 4 mA; JESD-609 Code: e0; No. of Functions: 1;

PHOTO DARLINGTON; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.5 mm; Minimum Operating Temperature: -25 Cel; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A; Shape: ROUND; Peak Wavelength (nm): 900;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000007 s; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .15 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V;

PHOTO TRANSISTOR; Shape: ROUND; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 3.1 mm;