Infineon Technologies - BP103-6

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 150 Cel; Peak Wavelength (nm): 880; Maximum Response Time: .000014 s; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 870;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00001 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 820; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .05 W; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Minimum Operating Temperature: -55 Cel; Maximum Power Dissipation: .165 W;

PHOTO TRANSISTOR; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;

PHOTO TRANSISTOR; Configuration: SINGLE; Peak Wavelength (nm): 900; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; Size: 5 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Additional Features: HIGH SENSITIVITY; Nominal Light Current: .4 mA; Minimum Collector-emitter Breakdown Voltage: 40 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 850; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .5 mA; Peak Wavelength (nm): 900; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .07 mA; No. of Functions: 1; Shape: ROUND; Maximum Power Dissipation: .075 W;

Vishay Intertechnology's VEMT2523SLX01 is an 850nm peak wavelength phototransistor with a max operating temperature of 100°C. With a nominal light current of 2.7mA and min collector-emitter breakdown voltage of 20V, it is ideal for applications requiring precise light detection in environments ranging from -40°C to 100°C.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: MATTE TIN; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 570; Shape: ROUND; Nominal Light Current: .02 mA; Size: 3 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Additional Features: HIGH SENSITIVITY; Infrared (IR) Range: YES; Size: 4.7 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 880; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Power Dissipation: .075 W;