NXP Semiconductors - A5G26H110N-2496

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Peak Reflow Temperature (C): 250; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; No. of Terminals: 2;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-609 Code: e3; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Terminals: 2; Minimum DS Breakdown Voltage: 110 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Drain Current (ID): 33 A; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Case Connection: SOURCE; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 36.5 W; Package Shape: RECTANGULAR; No. of Terminals: 2;

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; No. of Elements: 1; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 24 A; Transistor Element Material: GALLIUM NITRIDE; No. of Elements: 1;

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Additional Features: LOW NOISE; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Peak Reflow Temperature (C): 260; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 625 W; Minimum DS Breakdown Voltage: 130 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;