Toshiba - TPS605

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; No. of Functions: 1; Maximum Power Dissipation: .165 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: .075 mA; Maximum Operating Temperature: 85 Cel; Minimum Collector-emitter Breakdown Voltage: 6 V;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 1000 nA; Maximum Response Time: .00003 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Response Time: .000015 s; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 10 nA; Peak Wavelength (nm): 800;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; Nominal Light Current: 4 mA; JESD-609 Code: e3;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Power Dissipation: .165 W; Additional Features: HIGH SENSITIVITY; No. of Functions: 1;

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 70 V; Peak Wavelength (nm): 850; Maximum Dark Current: 50 nA; Nominal Light Current: 10 mA; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; Maximum On State Current: .015 A; Peak Wavelength (nm): 950;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 880; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Power Dissipation: .075 W;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0; Maximum Dark Current: 400 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: 4 mA; Maximum Dark Current: 100 nA; No. of Functions: 1; Configuration: SINGLE;

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum On State Current: .05 A; No. of Functions: 1; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -65 Cel;

Vishay Intertechnology's TEMT6000 is a phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W and dark current of 50nA. Ideal for surface mount applications, it has a max on state current of 0.02A.

PHOTO TRANSISTOR; Nominal Light Current: .2 mA; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE; Minimum Operating Temperature: -30 Cel; Maximum Dark Current: 100 nA;

PHOTO DARLINGTON; Size: 1.5 mm; Maximum Operating Temperature: 75 Cel; No. of Functions: 1; Infrared (IR) Range: NO; Additional Features: HIGH SENSITIVITY; SIDE VIEW;

VEMT2023SLX01 by Vishay Intertechnology is a single configuration phototransistor with peak wavelength of 860nm. It operates in temperatures ranging from -40°C to 100°C and has a nominal light current of 2.7mA. This optoelectronic component is suitable for applications requiring infrared range detection and a min collector-emitter breakdown voltage of 20V.