Vishay Intertechnology - TEMT6000

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver (Sn/Ag); JESD-609 Code: e2; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Peak Wavelength (nm): 925;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000009 s; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; Peak Wavelength (nm): 850; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN SILVER; Nominal Light Current: 2.5 mA; Infrared (IR) Range: YES; No. of Functions: 1;

Osram Opto Semiconductors' BPY62-3/4 is an 830nm peak wavelength phototransistor with a max temp of 125°C. It has a nominal light current of 5.8mA and max response time of 0.000007s. Ideal for applications requiring IR detection, it features through-hole mounting and can handle up to 0.1A on-state current.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Dark Current: 100 nA; Peak Wavelength (nm): 920;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 860; Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel;

QSE213C by Fairchild Semiconductor is a single phototransistor with a peak wavelength of 880nm. It has a min operating temperature of -40°C and a max power dissipation of 0.1W. This optoelectronic component is commonly used in applications requiring infrared sensing or detection.

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES; JESD-609 Code: e3;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Peak Wavelength (nm): 930; Maximum On State Current: .05 A; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Size: 3 mm; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .25 W;

PHOTO TRANSISTOR; Nominal Light Current: .08 mA; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 870;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000008 s; Maximum Operating Temperature: 95 Cel;

PHOTO TRANSISTOR; No. of Functions: 1; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570; Minimum Operating Temperature: -40 Cel; Shape: SQUARE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000006 s; Maximum Dark Current: 200 nA; Maximum Power Dissipation: .165 W;