Texas Instruments - TIED458

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Response Time: .000007 s; Maximum On State Current: .015 A;

PHOTO TRANSISTOR; Shape: ROUND; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Size: 3.1 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum On State Current: .015 A; Nominal Light Current: .016 mA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;

PHOTO TRANSISTOR; Nominal Light Current: 10 mA; Additional Features: HIGH SENSITIVITY; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 70 V; Shape: ROUND;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 860; Maximum Dark Current: 200 nA; Maximum On State Current: .015 A; Maximum Response Time: .000005 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Peak Wavelength (nm): 870; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Additional Features: TTL COMPATIBLE; Configuration: SINGLE; Shape: ROUND; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .15 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Light Current: .4 mA; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .07 W; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum On State Current: .05 A; Maximum Power Dissipation: .075 W; Minimum Collector-emitter Breakdown Voltage: 30 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;

OP505A by Tt Electronics Plc is a single configuration phototransistor with a size of 3.05 mm. It operates at temperatures ranging from -40 to 100 °C and has a peak wavelength of 930 nm. This optoelectronic component is commonly used in applications requiring infrared detection and through hole mounting.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum Dark Current: 200 nA; Maximum Response Time: .000002 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 880; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Maximum Power Dissipation: .075 W;