Texas Instruments - LS602

PHOTO TRANSISTOR; Size: 5 mm; Configuration: SINGLE; No. of Functions: 1; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000015 s; Minimum Operating Temperature: -60 Cel; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Peak Wavelength (nm): 900; Maximum Power Dissipation: .075 W; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; Peak Wavelength (nm): 850; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Nominal Light Current: 1 mA; Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin (Sn); Maximum Power Dissipation: .165 W; Additional Features: HIGH SENSITIVITY; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000012 s; Maximum Operating Temperature: 100 Cel; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); Nominal Light Current: 2.5 mA; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000008 s;

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Maximum Power Dissipation: .075 W; Nominal Light Current: 1.5 mA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel; Nominal Light Current: 7 mA; No. of Functions: 1;

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Maximum Response Time: .000018 s; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Peak Wavelength (nm): 870; JESD-609 Code: e0;

PHOTO TRANSISTOR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900; Maximum Operating Temperature: 125 Cel; Configuration: SINGLE;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Infrared (IR) Range: YES; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Peak Wavelength (nm): 900; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .03 mA; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel;