Infineon Technologies - SFH303F3

QSB363.ZR by Qt Optoelectronics is a 1.9mm ROUND PHOTO TRANSISTOR with max operating temp of 85°C and min of -40°C. It has 0.7mA light current, 100nA dark current, and 30V breakdown voltage. Ideal for applications requiring precise light sensing in compact spaces.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Infrared (IR) Range: YES; Maximum On State Current: .05 A; Size: 2.4 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Infrared (IR) Range: YES; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A; Peak Wavelength (nm): 570; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Minimum Collector-emitter Breakdown Voltage: 35 V; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel; Size: 5 mm; Minimum Collector-emitter Breakdown Voltage: 70 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Power Dissipation: .2 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; Shape: ROUND; Maximum Operating Temperature: 100 Cel;

PHOTO DARLINGTON; Shape: ROUND; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000007 s; Peak Wavelength (nm): 880;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900;

PHOTO TRANSISTOR; Nominal Light Current: .034 mA; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 720;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Size: 5 mm; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;