NXP Semiconductors - MRF6404

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1460 W; Maximum Collector Current (IC): 22 A; Package Shape: RECTANGULAR;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Minimum Power Gain (Gp): 6.5 dB;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 175 Cel; No. of Elements: 1;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; JESD-30 Code: R-CDSO-G8; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 940 W; Maximum Collector Current (IC): 24 A; Terminal Position: DUAL;

RF Power Bipolar Transistors;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND; Package Shape: RECTANGULAR;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Terminal Finish: GOLD;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 860 MHz; Maximum Power Dissipation (Abs): 7.5 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9 A; Minimum DC Current Gain (hFE): 15; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .09 A; Additional Features: HIGH RELIABILITY, DIFFUSED EMITTER BALLAST RESISTOR; JESD-30 Code: S-CQMW-F4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 825 MHz; Maximum Collector Current (IC): 2.75 A; Minimum DC Current Gain (hFE): 10;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): 1200 W; Maximum Collector Current (IC): 35 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 6 A;