STMicroelectronics - TSD2921

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1670 W; Minimum DS Breakdown Voltage: 130 V; JESD-30 Code: R-CDFM-F4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Minimum DS Breakdown Voltage: 125 V; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Finish: MATTE TIN; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: L BAND;

RF Power Field-Effect Transistors;

Wolfspeed's CG2H40010F is an N-CHANNEL RF FET with 84V DS Breakdown Voltage, 15dB Power Gain for AMPLIFIER applications in C BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE, with max. temp of 150°C and drain current of 1.5A.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Case Connection: SOURCE; Moisture Sensitivity Level (MSL): 3;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Terminal Form: FLAT; No. of Elements: 1;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

BLF177 by NXP Semiconductors is a single N-channel RF Power FET with 125V DS breakdown voltage, suitable for amplifier applications in the VHF band. It features a max drain current of 16A, power dissipation of 220W, and operates in enhancement mode. The package is ceramic-metal sealed co-fired with flange mount style and radial terminal position.

The NXP Semiconductors MRFE6VP6300HR5 is an RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 130V. It operates in the ultra high frequency band and is commonly used as an amplifier. This surface mount transistor has a max operating temperature of 225°C.

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Terminal Position: QUAD; Terminal Finish: MATTE TIN;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 437.5 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;