STMicroelectronics - PD57006-01

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Case Connection: SOURCE; Transistor Element Material: SILICON;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: KU BAND; Package Shape: RECTANGULAR; JESD-30 Code: R-XUUC-N4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Qualification: Not Qualified; Maximum Operating Temperature: 225 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Element Material: GALLIUM ARSENIDE;

STMicroelectronics PD55003L-E is an N-CHANNEL RF FET with 40V DS breakdown voltage, ideal for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 2.5A and power dissipation of 14W. The chip carrier package style and matte tin terminal finish make it suitable for high-frequency circuit designs.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 500 V; Terminal Position: SINGLE; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; Transistor Application: AMPLIFIER;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Package Style (Meter): FLANGE MOUNT; Minimum DS Breakdown Voltage: 40 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors;

GS61008T-MR by Gan Systems is an N-CHANNEL RF FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for SWITCHING applications at 100V DS Breakdown Voltage. With GALLIUM NITRIDE technology, it handles up to 90A ID and supports VERY HIGH FREQUENCY BAND operations.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 388 W; Terminal Position: DUAL; Qualification: Not Qualified;

D1008UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max temp of 200°C and comes in a RECTANGULAR package with FLANGE MOUNT style.

RF Power Field-Effect Transistors; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co); Moisture Sensitivity Level (MSL): 3;