NXP Semiconductors - BLW80

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: R-CDFM-F6;

NPN; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Case Connection: EMITTER;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: YES; Case Connection: BASE; Maximum Operating Temperature: 200 Cel; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 1.5 A; Case Connection: BASE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Power Dissipation (Abs): 36 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .001 A; No. of Elements: 1; No. of Terminals: 2;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.5 A; Terminal Position: DUAL; Case Connection: ISOLATED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; JESD-30 Code: R-CDFM-F2; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; Minimum Power Gain (Gp): 8 dB; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 575 W; Maximum Collector Current (IC): 20 A; Additional Features: HIGH RELIABILITY;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 2.5 A; Highest Frequency Band: L BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 9.2 W; Maximum Collector Current (IC): .375 A; Terminal Position: DUAL;

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Package Style (Meter): SMALL OUTLINE; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 17 V; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 15 A; Transistor Application: AMPLIFIER;