Onsemi - SDL8032-101

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 635; Maximum Forward Current: .11 A; Maximum Forward Voltage: 2.7 V; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 3 m; Peak Wavelength (nm): 810; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000001 s; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Peak Wavelength (nm): 850; Size: 4.95 mm; Configuration: SINGLE; Shape: ROUND; Maximum Operating Temperature: 85 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000001 s; Minimum Operating Temperature: -30 Cel; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 80 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .15 A; Peak Wavelength (nm): 1310; Minimum Operating Temperature: 0 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .08 A; Peak Wavelength (nm): 780;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -20 Cel; Spectral Bandwidth: 3 m; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 810;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1557;

LASER DIODE; Peak Wavelength (nm): 1588; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .3 A;

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Response Time: .00000000004 s; Maximum Forward Current: .15 A; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1540;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Minimum Operating Temperature: -30 Cel; Maximum Forward Voltage: 2 V; Semiconductor Material: InGaAs;

LASER DIODE; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1531; Maximum Operating Temperature: 65 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2.6 V; Peak Wavelength (nm): 650; Maximum Operating Temperature: 80 Cel; Maximum Forward Current: .05 A;

LASER DIODE; Peak Wavelength (nm): 1581; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;

LASER DIODE; Peak Wavelength (nm): 790; Configuration: COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE; Shape: ROUND; Nominal Output Power: 7 W; No. of Functions: 1;

CVN63-90ECL by Osi Laser Diode is a 2.2mm ROUND LASER DIODE with 8m SPECTRAL BANDWIDTH. It features SINGLE configuration and RADIAL MOUNT, ideal for optical communication systems and medical devices requiring precise laser technology.

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1578; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP;

LASER DIODE; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1571; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel;