Infineon Technologies - SFH488425

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1605;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Maximum Response Time: .0000000005 s; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 650; Semiconductor Material: AlGaInP; Maximum Forward Current: .08 A;

LASER DIODE; Peak Wavelength (nm): 790; Maximum Threshold Current: 55 mA; No. of Functions: 1; Shape: ROUND; Configuration: COMMON CATHODE 2 ELEMENTS WITH BUILT-IN PHOTO DIODE;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 658; Maximum Forward Voltage: 3 V; Maximum Forward Current: .12 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 1330; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 640; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: 0 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 680; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000000000125 s; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A;

LASER DIODE; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1596; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Additional Features: HIGH RELIABILITY; Maximum Operating Temperature: 60 Cel; Maximum Threshold Current: 60 mA; Nominal Output Power: 5 W; Peak Wavelength (nm): 785;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 815; Semiconductor Material: AlGaInP; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .105 A;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 405; No. of Functions: 1; Maximum Operating Temperature: 75 Cel; Nominal Output Power: 10 W;

LASER DIODE; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1533; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1591; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;

LASER DIODE; Peak Wavelength (nm): 690; No. of Functions: 1; Nominal Output Power: 30 W;

LASER DIODE; Shape: ROUND; Maximum Threshold Current: 50 mA; Size: 1.8 mm; Nominal Output Power: 50 W; No. of Functions: 1;