Onsemi - KDT00030

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 1000 nA; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 80 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Nominal Light Current: .63 mA; Minimum Operating Temperature: -40 Cel;

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Maximum Power Dissipation: .1 W; JESD-609 Code: e3; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .015 A;

KDT00030TR by Fairchild Semiconductor is a phototransistor with a peak wavelength of 630nm. It has a max operating temperature of 85 °C and a min operating temperature of -40 °C. The terminal finish is Matte Tin (Sn) and it has a max dark current of 100nA. It is designed for surface mount mounting and can be used in optoelectronic applications.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 125 Cel; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;

PHOTO DARLINGTON; Size: 1.5 mm; Maximum Operating Temperature: 75 Cel; No. of Functions: 1; Infrared (IR) Range: NO; Additional Features: HIGH SENSITIVITY; SIDE VIEW;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 870; Maximum Operating Temperature: 100 Cel; Size: 5 mm; Minimum Collector-emitter Breakdown Voltage: 70 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum On State Current: .1 A; Maximum Power Dissipation: .3 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .47 W; Maximum Response Time: .00001 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .00001 s; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A;

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Functions: 4; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Power Dissipation: .05 W; Additional Features: TTL COMPATIBLE;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 15 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880;