NXP Semiconductors - MMG3002NT1

Analog Devices' MAX2640EUT+T is a wideband low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; No. of Functions: 1; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Temperature: 110 Cel; Minimum Operating Frequency: 1240 MHz; Maximum Voltage Standing Wave Ratio: 3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 20000 MHz;

NARROW BAND MEDIUM POWER; Gain: 29.8 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 23 dBm; Maximum Operating Frequency: 2700 MHz; Construction: COMPONENT;

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3/5; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN; Power Supplies (V): 3;

RF/Microwave Amplifiers;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Input Power (CW): 13 dBm;

NARROW BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: TIN; Gain: 11 dB; Maximum Operating Temperature: 150 Cel; Maximum Input Power (CW): 0 dBm;

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 13 dBm; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -54 Cel; Maximum Operating Temperature: 85 Cel;

The NXP Semiconductors MW7IC2750NBR1 is a narrow band high power RF amplifier with a gain of 24 dB. It operates within the frequency range of 2500-2700 MHz and can handle a max input power of 30 dBm. This component is suitable for applications requiring high power amplification in RF and microwave systems.

Analog Devices' HMC8325-SX is a PHEMT RF amplifier with 22 terminals, operating from 71-86 GHz. It offers a gain of 19.5 dB and requires a 3V power supply, drawing a max current of 50 mA. Ideal for wideband low-power applications in RF and microwave systems.