Infineon Technologies - BGA420H6327XTSA1

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

XL1000-BD-000V by M/a-com Technology Solutions is a GAAS RF amplifier with 12dB gain, operating b/w 20-40 GHz. It has a max input power of 12 dBm and requires a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its compact construction and temperature range of -55 to 85°C.

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz; JESD-609 Code: e4; Minimum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -40 Cel;

HMC788ALP2ETR by Analog Devices is a wide band low power RF amplifier with 9 dB gain, suitable for frequencies ranging from 10 MHz to 10 GHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for applications requiring RF amplification in various electronic systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: MATTE TIN;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

WIDE BAND LOW POWER; Minimum Operating Temperature: -45 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; No. of Functions: 1;

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;

RF/Microwave Amplifiers;

WIDE BAND HIGH POWER;

HMC549MS8G by Analog Devices is a wide band low power RF amplifier with 2 dB gain, operating from 40 MHz to 960 MHz. It has a max input power of 0 dBm and operates on a 5V power supply. This surface mount component is ideal for RF and microwave applications requiring amplification in the frequency range specified.

NARROW BAND MEDIUM POWER; Gain: 29.8 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 23 dBm; Maximum Operating Frequency: 2700 MHz; Construction: COMPONENT;

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Technology: BICMOS; Maximum Supply Current: 5 mA; Maximum Operating Frequency: 1606 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Gain: 9 dB;

WIDE BAND LOW POWER;