NXP Semiconductors - LZ1418E100RTRAY

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: FLAT; Terminal Position: RADIAL;

NPN; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER; Case Connection: EMITTER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Qualification: Not Qualified; JESD-30 Code: S-PDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 108 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 16 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .7 A; No. of Terminals: 2;

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Maximum Collector-Emitter Voltage: 35 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 16 A; JESD-30 Code: O-PRPM-F4;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): .8 A; Case Connection: EMITTER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 21 A; Transistor Element Material: SILICON; Additional Features: DIFFUSED EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .11 A; Package Shape: ROUND; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2.8 A; JESD-30 Code: O-CRPM-F4; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT;

NPN; Surface Mount: YES; Maximum Collector Current (IC): 1.4 A; JESD-30 Code: R-CDFM-F6; Transistor Element Material: SILICON; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 21 A; Transistor Application: AMPLIFIER;