NXP Semiconductors - BLX98

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1000 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSFM-T3;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified;

PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 5500 MHz; Maximum Collector Current (IC): .0113 A; JESD-30 Code: R-CDFP-F16;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 20;

The NXP Semiconductors BLT50,115 is a RF Power BJT transistor with NPN polarity and single configuration. It features a min power gain of 10 dB, operates in the ultra high frequency band, and has a max power dissipation of 2 W. Ideal for amplifier applications, this transistor has a max operating temperature of 175°C and can handle a collector current of 0.5 A.

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 40 A; Minimum DC Current Gain (hFE): 15;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7.7 A; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT;

NPN; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 600 W; Maximum Collector Current (IC): 17.8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 12.5 A; Transistor Element Material: SILICON; Maximum Collector-Base Capacitance: 90 pF;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3400 MHz; Maximum Power Dissipation (Abs): 19.3 W; Maximum Collector Current (IC): 1.25 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2.6 A; Package Shape: RECTANGULAR; No. of Elements: 2;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 3 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 13 A; Minimum Power Gain (Gp): 6 dB;