STMicroelectronics - SD1732(TDS595)

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 145 W; Maximum Collector Current (IC): 8 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 27 W; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 625 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-CDFM-F2; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Transistor Element Material: SILICON; Terminal Form: FLAT;

RF Power Bipolar Transistors; Terminal Finish: GOLD; JESD-609 Code: e4;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Qualification: Not Qualified; Terminal Form: FLAT; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .62 A; Maximum Operating Temperature: 200 Cel;

RF Power Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; Terminal Form: FLAT;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 185 W; Maximum Collector Current (IC): 8.5 A; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 88.8 W; Maximum Collector Current (IC): 1.35 A; No. of Terminals: 4;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): 6 A; Highest Frequency Band: L BAND;