NXP Semiconductors - BLV62

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BLV62 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLV62
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12.5 A; Package Shape: RECTANGULAR; Package Body Material: METAL;
Datasheet BLV62 Datasheet
NAME DESCRIPTION
Minimum Power Gain (Gp): 8.5 dB
Package Body Material: METAL
Maximum Collector Current (IC): 12.5 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 30
No. of Terminals: 4
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 28 V
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-MDFM-F4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
Maximum Power Dissipation Ambient: 320 W
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