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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BLF245 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Case Connection: ISOLATED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | BLF245 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | AMPLIFIER |
| Maximum Drain Current (ID): | 6 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 68 W |
| Terminal Position: | RADIAL |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-CRFM-F4 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 68 W |
| Maximum Drain-Source On Resistance: | .75 ohm |
| Minimum Power Gain (Gp): | 13 dB |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 65 V |
| Qualification: | Not Qualified |
| Additional Features: | LOW NOISE |
| Maximum Drain Current (Abs) (ID): | 6 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
