NXP Semiconductors - BF908TRL13

Onsemi's MMBFJ310LT1G is an N-CHANNEL FET for AMPLIFIER applications. It operates in DEPLETION MODE at 25V with ULTRA HIGH FREQUENCY BAND. With a power dissipation of 0.225W, it features GULL WING terminals and PLASTIC/EPOXY package suitable for surface mount technology.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Package Shape: ROUND; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e4; Package Shape: ROUND; Operating Mode: DEPLETION MODE;

RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; No. of Terminals: 3; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-72;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Additional Features: LOW NOISE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Case Connection: SOURCE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

SMMBFJ310LT1G by Onsemi is an N-CHANNEL RF Small Signal FET with a max power dissipation of 0.225W and a max operating temperature of 150°C. It is surface mountable and commonly used in junction field effect transistor applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: THROUGH-HOLE; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .03 A;

D2089UK by Tt Electronics Plc is an N-CHANNEL RF FET with 65V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring METAL-OXIDE SEMICONDUCTOR tech, it has 0.5pF Crss and GOLD finish terminals in a DISK BUTTON package.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Operating Mode: DEPLETION MODE; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): 1 A; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; JESD-30 Code: R-PSSO-F3;

RF Small Signal Field-Effect Transistors;

RF Small Signal Field-Effect Transistors;