NXP Semiconductors - BF256A

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 10 V; Terminal Position: DUAL; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .04 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Maximum Drain Current (ID): .03 A; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Field Effect Transistor Technology: JUNCTION; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Field Effect Transistor Technology: JUNCTION; No. of Terminals: 3;

RF Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: KU BAND; Transistor Element Material: GALLIUM ARSENIDE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

JANTX2N3822 by Defense Logistics Agency is an N-CHANNEL RF FET with 50V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers a Crss of 3pF for VERY HIGH FREQUENCY applications. This SILICON transistor, compliant with MIL-19500/375G, features a CYLINDRICAL package ideal for RF Small Signal circuits.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .28 W; Maximum Feedback Capacitance (Crss): .035 pF; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 11 dB; Maximum Drain Current (ID): .025 A; No. of Elements: 1;

N-CHANNEL; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 1; JEDEC-95 Code: TO-72; No. of Terminals: 4;

N-CHANNEL; Maximum Drain Current (ID): .055 A; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (Abs) (ID): .055 A; Maximum Power Dissipation Ambient: .25 W; Field Effect Transistor Technology: METAL SEMICONDUCTOR;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 22.8 dB; Case Connection: SOURCE; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Package Shape: ROUND; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Terminal Position: DUAL; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;