NXP Semiconductors - BF1208D,115

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: RADIAL; Package Shape: ROUND; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .33 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Transistor Element Material: GALLIUM ARSENIDE; Maximum Drain Current (Abs) (ID): .1 A;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; No. of Elements: 1;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Maximum Power Dissipation Ambient: .18 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Drain Current (Abs) (ID): .06 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: O-MBCY-W4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Terminal Position: DUAL; JESD-30 Code: R-CDSO-N3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .05 A; JEDEC-95 Code: TO-92;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 8 dB; Minimum DS Breakdown Voltage: 8 V; No. of Terminals: 4;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G4; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .04 A; Package Shape: RECTANGULAR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; No. of Elements: 1;

BF511,215 by NXP Semiconductors is an N-CHANNEL RF FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a max power dissipation of 0.25 W. Ideal for AMPLIFIER applications due to its small outline package style and GULL WING terminal form.

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Maximum Feedback Capacitance (Crss): .03 pF;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-F6; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.75 W; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): 30;