Fairchild Semiconductor - BF244B

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Terminal Position: DUAL; Terminal Form: GULL WING;

N-CHANNEL; Surface Mount: NO; Transistor Element Material: SILICON; No. of Elements: 1; JEDEC-95 Code: TO-72; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: DEPLETION MODE; JEDEC-95 Code: TO-206AF; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; No. of Terminals: 4; Transistor Element Material: SILICON;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Terminal Form: WIRE; Terminal Position: BOTTOM;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; No. of Terminals: 4; Case Connection: SOURCE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .045 pF; Transistor Element Material: SILICON; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Body Material: METAL; Transistor Element Material: SILICON; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; Additional Features: LOW NOISE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W4; No. of Terminals: 4;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 4; Maximum Drain Current (ID): .04 A; Minimum DS Breakdown Voltage: 7 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Form: GULL WING; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

Broadcom ATF-55143-TR2G is a N-channel RF FET with 15.5 dB power gain, ideal for amplifier applications in C band. It features 5V DS breakdown voltage, 0.1A drain current, and operates at up to 150°C. The transistor's high electron mobility technology ensures efficient performance in small outline package style.