New Jersey Semiconductor Products - MRF6522-70

N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;

BLP10H605AZ by Ampleon Netherlands BV is a plastic/epoxy RF power FET with N-channel configuration. It operates in enhancement mode and has a min DS breakdown voltage of 104V. This transistor is commonly used as an amplifier in the L band frequency range.

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 236 W; No. of Elements: 2; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 389 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 318 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: SOURCE; Highest Frequency Band: L BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93 W; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 7 A;

PD55015S by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 5A and a max power dissipation of 73W.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Element Material: GALLIUM ARSENIDE; Case Connection: SOURCE;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40;

NXP Semiconductors' MRFE6VP6300HR3 is an N-CHANNEL RF Power FET with 130V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR and METAL-OXIDE SEMICONDUCTOR technology is used, with a max operating temperature of 225°C.