Ampleon Netherlands B V - BLP10H605AZ

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: 136 W; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Style (Meter): CHIP CARRIER;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Highest Frequency Band: L BAND; Reference Standard: IEC-60134; Package Shape: RECTANGULAR;

GS61008P-MR by Gan Systems is an N-CHANNEL FET for SWITCHING applications. It operates in ENHANCEMENT MODE with a 100V DS Breakdown Voltage and 90A ID. Utilizes GALLIUM NITRIDE technology, suitable for VERY HIGH FREQUENCY BAND operations.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 269 W; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Drain Current (Abs) (ID): 4 A; Maximum Drain Current (ID): 4 A;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): FLATPACK; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 190 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 65 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 4 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFP-F2; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFP-F4; Terminal Position: DUAL; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Terminal Position: DUAL; JESD-30 Code: R-PDSO-F2;

NXP Semiconductors' MRFE6VP6300HR3 is an N-CHANNEL RF Power FET with 130V DS Breakdown Voltage. It operates in the Ultra High Frequency Band, featuring a COMMON SOURCE configuration for AMPLIFIER applications. The package is RECTANGULAR and METAL-OXIDE SEMICONDUCTOR technology is used, with a max operating temperature of 225°C.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED;