Motorola - MRF221

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 2.8 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 730 W; Maximum Collector Current (IC): 18.75 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3200 MHz; Maximum Collector Current (IC): .7 A; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3.5 A; Terminal Position: RADIAL; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 22 A; Qualification: Not Qualified; JESD-30 Code: S-PDFM-F2;

RF Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 20 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7 A; Terminal Form: FLAT; Transistor Element Material: SILICON;

NXP Semiconductors' MX0912B251Y is an NPN RF Power BJT with 7 dB min power gain, suitable for L Band applications. It has a max power dissipation of 690 W and can operate at temperatures up to 200°C. The transistor is designed for amplifier configurations and features a flange mount package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 2 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 320 W; Maximum Collector Current (IC): 16 A; Maximum Operating Temperature: 200 Cel;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: TIN;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 185 W; Maximum Collector Current (IC): 8.5 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; JESD-30 Code: R-CDSO-G8; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; JESD-609 Code: e4; Highest Frequency Band: S BAND;

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 105 W; Maximum Collector Current (IC): 4 A; Maximum Collector-Base Capacitance: 28 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 15; Maximum Power Dissipation Ambient: 23 W;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 3 A; No. of Elements: 1; Terminal Form: FLAT;