NXP Semiconductors - MRF9100LSR3

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 860 MHz; Maximum Power Dissipation (Abs): 7.5 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 257 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Collector Current (IC): .06 A; No. of Terminals: 6;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Transistor Application: AMPLIFIER; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.7 W; Maximum Collector Current (IC): .82 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Maximum Collector Current (IC): 3.7 A; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.4 A; No. of Elements: 1; Transistor Element Material: SILICON;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Additional Features: WITH EMITTER BALLASTING RESISTORS; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; JESD-30 Code: R-CDFM-F2; Maximum Operating Temperature: 200 Cel;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 3 A; Terminal Position: RADIAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Maximum Collector Current (IC): 2.5 A; Highest Frequency Band: L BAND;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Minimum Operating Temperature: -55 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19.4 W; Maximum Collector Current (IC): .44 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; Qualification: Not Qualified; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1.8 A; Minimum DC Current Gain (hFE): 10;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 70 W; Maximum Collector Current (IC): 8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 750 MHz; Maximum Collector Current (IC): 2.5 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;