Micron Technology - N25Q064A11ESE40G

STMicroelectronics M25P64-VME6TG is a 3V NOR Flash Memory with 8Mx8 organization, SPI serial bus type, and 50MHz clock frequency. Ideal for industrial applications requiring high endurance of 100K write/erase cycles in a compact package measuring 8mm x 6mm.

Micron Technology's MT25QL512ABB1EW9-0SIT is a 512Mx1 flash memory with synchronous operation, 133 MHz clock frequency, and 3V programming voltage. Ideal for industrial applications, it offers a memory density of 536870912 bits in a small outline package with a max temperature of 85°C.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: HTSSOP; Package Shape: RECTANGULAR; Data Polling: YES;

M25P16-VMF6P by STMicroelectronics is a 16Mb NOR flash memory with synchronous operation, 2MX8 organization, and SPI serial bus type. It has a max clock frequency of 50MHz and endurance of 100K write/erase cycles. Ideal for industrial applications requiring fast data transfer and reliable non-volatile memory storage.

The Infineon Technologies S25FS512SAGBHI210 is a NOR type flash memory with 64Mx8 organization, operating at 133MHz. It features hardware/software write protection and offers 100000 write/erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in a compact grid array package.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 18.4 mm;

FLASH; No. of Terminals: 8; Package Code: SOP; Package Shape: SQUARE; Type: NOR TYPE; Minimum Operating Temperature: 0 Cel;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: NICKEL PALLADIUM GOLD;

SDINBDG4-16G-I1 by Western Digital is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. It operates at 200 MHz clock frequency, offering 3000 Write/Erase Cycles endurance. Suitable for applications requiring high-density memory storage and fast data processing in compact devices.

N25Q128A13ESE40F by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has an endurance of 100000 write/erase cycles. This flash memory is commonly used in industrial applications requiring high-speed data storage.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Supply Current: 60 mA;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20;

CONFIGURATION MEMORY; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP56,.8,20;

S29GL032N90TFI040 by Infineon Technologies is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 90ns. Ideal for applications requiring high-speed data storage in harsh environments.

Spansion's AM29F040B-90JF is a 512Kx8 NOR flash memory chip with 8 sectors of 64K words each. Operating at 5V, it offers fast access time of 90ns and endurance up to 1M write/erase cycles. Ideal for industrial applications requiring high-speed parallel memory with low standby current.

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20;

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

SST26VF032B-104V/MF by Microchip: NOR Flash Memory, 3V supply, 104MHz clock freq. Ideal for industrial applications requiring high endurance EEPROM with SPI interface and 4Mx8 organization.