Infineon Technologies - SFH320

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 1.5 mm; Peak Wavelength (nm): 870; Minimum Collector-emitter Breakdown Voltage: 30 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .025 A; Minimum Operating Temperature: -20 Cel; Maximum Response Time: .000006 s; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Nominal Light Current: .63 mA; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -60 Cel; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .05 W; Maximum Response Time: .000008 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Peak Wavelength (nm): 900; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Nominal Light Current: 2 mA; No. of Functions: 12; Minimum Operating Temperature: -65 Cel;

PHOTO TRANSISTOR; Nominal Light Current: .034 mA; Minimum Collector-emitter Breakdown Voltage: 20 V; Size: 3 mm; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 720;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 3 nA; Maximum On State Current: .02 A;

TEKT5400S-ASZ by Vishay Intertechnology is a 3mm round phototransistor with peak wavelength of 920nm. It operates b/w -40 to 85°C, has max power dissipation of 0.15W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with nominal light current of 4mA and dark current up to 100nA.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 930; No. of Functions: 1; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Configuration: SINGLE; Maximum Power Dissipation: .165 W; Maximum Dark Current: 200 nA;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Size: 5 mm; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; JESD-609 Code: e3;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 1.58 mm; No. of Functions: 1; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Power Dissipation: .1 W;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO DARLINGTON; Shape: ROUND; Additional Features: HIGH SENSITIVITY; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 30 V; Nominal Light Current: .2 mA;

PHOTO TRANSISTOR; Additional Features: DAYLIGHT FILTER; Infrared (IR) Range: YES; Minimum Operating Temperature: -55 Cel; Size: 5 mm; No. of Functions: 1;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Maximum Response Time: .000008 s; Maximum Power Dissipation: .05 W; Maximum Dark Current: 25 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .05 A; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 20 nA;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;