Infineon Technologies - BPX81-2

Photo Transistors; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 860; Maximum Dark Current: 200 nA; Maximum On State Current: .015 A; Maximum Response Time: .000005 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Size: 3.1 mm; Nominal Light Current: .02 mA; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Configuration: SINGLE; No. of Functions: 1; Size: 1.2 mm; Nominal Light Current: .01 mA; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Size: 3 mm; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 20 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Maximum Power Dissipation: .47 W; Maximum Response Time: .00001 s;

PHOTO DARLINGTON; Shape: ROUND; Nominal Light Current: 12 mA; No. of Functions: 1; Configuration: SINGLE; Size: 4.69 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .65 mA; Shape: SQUARE; No. of Functions: 1; Maximum Power Dissipation: .165 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; Peak Wavelength (nm): 820; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 570; Shape: ROUND; Nominal Light Current: .02 mA; Size: 3 mm;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Maximum Operating Temperature: 75 Cel; Size: 3 mm; Shape: ROUND; Configuration: SINGLE;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Response Time: .000008 s;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 100 nA; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e0;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 800; Minimum Operating Temperature: -20 Cel; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;