Infineon Technologies - BP103BF2

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 930; Minimum Operating Temperature: -40 Cel;

PT100MF0MP by Sharp Corporation is a 1.6mm round phototransistor with a peak wavelength of 910nm. It operates in temperatures ranging from -30°C to 85°C and has a min collector-emitter breakdown voltage of 35V. This phototransistor is commonly used for optoelectronic applications requiring infrared detection.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .0001 A; Maximum Operating Temperature: 85 Cel; Maximum Power Dissipation: .05 W; Maximum Response Time: .000025 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 850; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 1000 nA; Maximum Response Time: .00003 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

TEKT5400S by Vishay Intertechnology is a 1.5mm round phototransistor with peak wavelength of 920nm. It operates b/w -40 to 85°C, has a collector-emitter breakdown voltage of 70V, and can handle up to 0.1A on-state current. Ideal for optoelectronic applications requiring IR detection in through-hole mounting setups.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; Maximum Power Dissipation: .07 W; Maximum Operating Temperature: 75 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .2 W; JESD-609 Code: e0; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); No. of Functions: 1; JESD-609 Code: e3; Size: 5 mm;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Nominal Light Current: .08 mA; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Minimum Operating Temperature: -25 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Configuration: SINGLE; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .01 mA; No. of Functions: 1; Infrared (IR) Range: YES; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 200 nA; Infrared (IR) Range: YES; Maximum On State Current: .05 A; Size: 2.4 mm;

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Additional Features: SIDE VIEW; Size: 1.5 mm; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Nominal Light Current: .02 mA; No. of Functions: 1; Shape: ROUND; Maximum Operating Temperature: 85 Cel; Size: 3.1 mm;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0; Maximum On State Current: .05 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Maximum Operating Temperature: 125 Cel;