Renesas Electronics - L14N2

PHOTO TRANSISTOR; Maximum Dark Current: 100 nA; Shape: ROUND; Infrared (IR) Range: YES; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .07 W; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Terminal Finish: Matte Tin (Sn); Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Size: 5 mm; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .125 W; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .000015 s;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 900; Maximum Response Time: .000008 s; Maximum Dark Current: 25 nA; Minimum Operating Temperature: -60 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; No. of Functions: 1; Additional Features: TTL COMPATIBLE; Infrared (IR) Range: YES;

Photo Transistors; Maximum Response Time: .000125 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 70 Cel; Maximum On State Current: .0001 A; Maximum Power Dissipation: .09 W;

PHOTO TRANSISTOR; Nominal Light Current: 2 mA; Shape: ROUND; Configuration: SEPARATE, 9 ELEMENTS; Maximum Operating Temperature: 125 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Maximum Operating Temperature: 75 Cel; Configuration: SINGLE; Nominal Light Current: .014 mA; Minimum Operating Temperature: -20 Cel; Minimum Collector-emitter Breakdown Voltage: 20 V;

OP520 by Tt Electronics Plc is a phototransistor with peak wavelength of 935nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and max on state current of 0.02A. Ideal for surface mount applications requiring high sensitivity in optoelectronics.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000006 s; Peak Wavelength (nm): 860; Maximum Power Dissipation: .165 W; Minimum Operating Temperature: -55 Cel;

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; No. of Functions: 1; Shape: ROUND; Minimum Collector-emitter Breakdown Voltage: 30 V; Configuration: SINGLE;

QSE113 by Qt Optoelectronics is a single configuration phototransistor with a size of 0.062 mm. It operates in temperatures ranging from -40 to 100 °C and has a max power dissipation of 0.1 W. It is commonly used in applications requiring infrared detection and has a fast response time of 0.000008 s.

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900; Maximum Operating Temperature: 125 Cel; Configuration: SINGLE;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 70 V; Nominal Light Current: 7.5 mA; JESD-609 Code: e3;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .165 W; JESD-609 Code: e0; Maximum Dark Current: 200 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Peak Wavelength (nm): 880; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Maximum Response Time: .000008 s; Maximum Operating Temperature: 125 Cel;