Analog Devices - HMC549MS8G

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Power Supplies (V): 5;

MAAM-011101-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 17 dB gain, operating from 4 to 20 GHz. It can handle up to 23 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification.

Analog Devices' HMC608LC4TR is a GAAS RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and max current of 350mA, suitable for wideband medium-power applications in surface-mount setups.

HMC478MP86TR by Analog Devices is a wide band low power RF amplifier with a max operating temperature of 85°C and a min operating temperature of -40°C. It has 1 function, operates on a 5V power supply, and is mounted using surface mount technology. This amplifier is commonly used in RF and microwave applications.

WIDE BAND HIGH POWER;

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1700 MHz;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Maximum Operating Frequency: 6000 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 1.2; Minimum Operating Frequency: 100 MHz;

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;

WIDE BAND MEDIUM POWER; JESD-609 Code: e3/e4; Maximum Operating Frequency: 50000 MHz; Gain: 8 dB; Construction: COMPONENT; Maximum Input Power (CW): 18 dBm;

WIDE BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 4; Construction: COMPONENT; Minimum Operating Frequency: 2000 MHz; Maximum Operating Frequency: 20000 MHz;

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Technology: PHEMT; Power Supplies (V): 5; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 1000 MHz; Maximum Voltage Standing Wave Ratio: 1.22; Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;

WIDE BAND LOW POWER; Technology: GAAS; Power Supplies (V): 3; Minimum Operating Temperature: -55 Cel; Maximum Supply Current: 88 mA; Construction: COMPONENT;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Gain: 17.5 dB; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -65 Cel; Construction: COMPONENT;