Hittite Microwave - HMC532LP4E

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Gain: 17.3 dB;

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.

WIDE BAND MEDIUM POWER;

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 8 dBm; Characteristic Impedance: 200 ohm; Construction: COMPONENT; JESD-609 Code: e3;

WIDE BAND LOW POWER; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm;

NARROW BAND LOW POWER; Maximum Operating Frequency: 2400 MHz; Maximum Input Power (CW): 16 dBm; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Gain: 9 dB;

Mini-circuits ERA-3SM+ is a wideband low power RF amplifier with 15.4 dB gain and 50 ohm impedance. It operates from 0 to 3000 MHz, handling up to 13 dBm CW input power. Ideal for surface mount applications in RF and microwave systems, it has a compact plastic/epoxy package and requires only a 3V supply.

Qorvo's TGA2214 is a wide band high power RF amplifier with 22 dB gain, operating from 2-18 GHz. It can handle up to 31 dBm CW input power and operates in temperatures ranging from -40 to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER;

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

RF/Microwave Amplifiers;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Maximum Input Power (CW): 22 dBm;

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;

Qorvo's TQP7M9103 is a wide band medium power RF amplifier with 16.6 dB gain, operating from 400 MHz to 4000 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for surface mount applications in RF & microwave systems. With a compact plastic/epoxy package, it operates b/w -40°C to 85°C temperature range.

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.