Analog Devices - AD8354ACPZ-REEL7

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 5500 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Construction: COMPONENT; Gain: 4.5 dB; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Terminal Finish: TIN; Maximum Operating Frequency: 4000 MHz; Additional Features: HIGH RELIABILITY; Minimum Operating Frequency: 50 MHz; Maximum Input Power (CW): 23 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Maximum Operating Frequency: 12000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Maximum Input Power (CW): 15 dBm; Maximum Voltage Standing Wave Ratio: 1.6; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -40 Cel; Gain: 13.3 dB;

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 500 MHz; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 80000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;

NARROW BAND LOW POWER;

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.

The NXP Semiconductors MW7IC2220NR1 is a MOS RF amplifier with 29 dB gain, operating b/w 2-2.2 GHz. It has a max input power of 20 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & microwave field. The component is designed for a max temperature of 150°C and operates on a 28V supply.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Maximum Input Power (CW): 10 dBm; No. of Functions: 1; Maximum Voltage Standing Wave Ratio: 1.58;

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.

HMC498LC4TR by Analog Devices is a wide band medium power RF amplifier with 18 dB gain, operating from 17-24 GHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for RF and microwave applications requiring high performance amplification in a compact ceramic package.

WIDE BAND MEDIUM POWER; Terminal Finish: TUNGSTEN NICKEL GOLD; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 9500 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SL,4GW-LD,.085CIR; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Additional Features: HIGH RELIABILITY, IT CAN ALSO OPERATE AT 4920 TO 5805 MHZ; Maximum Operating Temperature: 85 Cel;