Hittite Microwave - HMC441LC3B

WIDE BAND MEDIUM POWER; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 24 dBm; JESD-609 Code: e3;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Power Supplies (V): 28; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Maximum Input Power (CW): 25 dBm; Terminal Finish: NICKEL PALLADIUM GOLD; Power Supplies (V): 5;

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: MATTE TIN;

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Maximum Input Power (CW): 10 dBm; No. of Functions: 1; Maximum Voltage Standing Wave Ratio: 1.58;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Power Supplies (V): 3.9;

TQP3M9009 by Qorvo is a wide band medium power RF amplifier with 20 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND MEDIUM POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 0 MHz; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3; Package Equivalence Code: LCC8,.2SQ,28;

WIDE BAND LOW POWER;

NARROW BAND HIGH POWER; Construction: MODULE; Minimum Operating Temperature: -30 Cel; Maximum Operating Frequency: 162 MHz; Minimum Operating Frequency: 154 MHz; Maximum Voltage Standing Wave Ratio: 3;

Analog Devices' MAX2640EUT+T is a wideband low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Supply Current: 10 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Package Equivalence Code: LCC16,.16SQ,25;

WIDE BAND LOW POWER;

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.