Analog Devices - HMC907ALP5ETR

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: HEMT; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Voltage Standing Wave Ratio: 1.3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

HMC659LC5 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 50 ohm impedance. It operates from 0 to 15000 MHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in a compact plastic/epoxy package.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Construction: COMPONENT; Maximum Supply Current: 525 mA;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: COMPONENT;

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

NARROW BAND LOW POWER; Maximum Operating Frequency: 2400 MHz; Maximum Input Power (CW): 16 dBm; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Gain: 9 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: TIN; Gain: 11 dB; Maximum Operating Temperature: 150 Cel; Maximum Input Power (CW): 0 dBm;

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; Power Supplies (V): +-15;

NXP Semiconductors' BGA2870,115 is a RF & Microwave Amplifier with 2.5V power supply, 6 terminals, and 18.5mA max supply current. It features a plastic/epoxy package body material and tin terminal finish, suitable for surface mount applications in various electronic devices.

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER;