Freescale Semiconductor - AFT27S006NT1

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 317 W; Maximum Time At Peak Reflow Temperature (s): 40; Maximum Operating Temperature: 150 Cel;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 59 W; Qualification: Not Qualified; Highest Frequency Band: L BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Operating Mode: DEPLETION MODE; Additional Features: HIGH RELIABILITY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-PDSO-N6; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Terminal Position: DUAL; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Peak Reflow Temperature (C): 250; JESD-609 Code: e3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Position: DUAL; No. of Terminals: 2;

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Moisture Sensitivity Level (MSL): NOT APPLICABLE;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Minimum Power Gain (Gp): 15 dB; Operating Mode: ENHANCEMENT MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Application: AMPLIFIER; Package Style (Meter): SMALL OUTLINE;

BLP10H605AZ by Ampleon Netherlands BV is a plastic/epoxy RF power FET with N-channel configuration. It operates in enhancement mode and has a min DS breakdown voltage of 104V. This transistor is commonly used as an amplifier in the L band frequency range.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 74 W; JESD-30 Code: R-PDFP-F2; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 690 W; Terminal Finish: Matte Tin (Sn); Maximum Operating Temperature: 225 Cel;

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL; Transistor Element Material: GALLIUM NITRIDE;