Boca Semiconductor - 2N4870

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-5;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Operating Temperature: -65 Cel;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Maximum Emitter Current: 50 mA; Minimum Valley Point Current: 4 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; Minimum Intrinsic Stand-off Ratio: .47;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Transistor Element Material: SILICON;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Qualification: Not Qualified; Minimum Operating Temperature: -65 Cel;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Operating Temperature: 140 Cel; Maximum Inter-base Voltage: 65 V;

Unijunction Transistors; Surface Mount: NO; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Static Inter-Base Resistance: 4.7 kohm; Minimum Valley Point Current: 4 mA; Maximum Intrinsic Stand-off Ratio: .82;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Peak Point Current: 5 mA; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 35 V;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Transistor Element Material: SILICON;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Intrinsic Stand-off Ratio: .75;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Minimum Intrinsic Stand-off Ratio: .56; Maximum Operating Temperature: 125 Cel;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Elements: 1; Package Body Material: METAL;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Inter-base Voltage: 65 V; Terminal Position: BOTTOM;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Minimum Operating Temperature: -65 Cel;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Intrinsic Stand-off Ratio: .56; Maximum Static Inter-Base Resistance: 9.1 kohm;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; JEDEC-95 Code: TO-18;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Elements: 1; Maximum Static Inter-Base Resistance: 9.1 kohm;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Valley Point Current: 4 mA; Maximum Intrinsic Stand-off Ratio: .75;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Operating Temperature: 125 Cel;