Onsemi - 2N1671A

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-W3; Minimum Operating Temperature: -55 Cel;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Intrinsic Stand-off Ratio: .56; Maximum Static Inter-Base Resistance: 9.1 kohm;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Minimum Valley Point Current: 2 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Maximum Emitter Current: 70 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -65 Cel;

Unijunction Transistors; Configuration: SINGLE; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Transistor Element Material: SILICON;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Peak Point Current: 12 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Minimum Operating Temperature: -65 Cel;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .25 W; Maximum Intrinsic Stand-off Ratio: .85; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Static Inter-Base Resistance: 4 kohm;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Transistor Element Material: SILICON; Minimum Valley Point Current: 8 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Maximum Emitter Current: 70 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-5;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Terminals: 3; JESD-30 Code: O-MBCY-W3;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Static Inter-Base Resistance: 12 kohm; Minimum Intrinsic Stand-off Ratio: .74;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Operating Temperature: 125 Cel;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Maximum Peak Point Current: 5 mA;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; JEDEC-95 Code: TO-18;

Unijunction Transistors; Qualification: Not Qualified;

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: THROUGH-HOLE; Transistor Application: SWITCHING;

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Maximum Emitter Current: 50 mA; Maximum Peak Point Current: 5 mA;