Asi Semiconductor - MRF237

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.

RF Small Signal Bipolar Transistors; Surface Mount: NO; JEDEC-95 Code: TO-39; Package Body Material: METAL; Terminal Form: WIRE; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; JEDEC-95 Code: TO-92;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Collector Current (IC): .025 A; Maximum VCEsat: .5 V;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .5 A;

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 155;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Terminal Finish: Matte Tin (Sn) - annealed;

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

HFA3127RZ96 by Renesas Electronics is an NPN RF transistor with a max collector-emitter voltage of 8V. It has a nominal transition frequency of 8000MHz, making it suitable for amplifier applications in the ultra-high frequency band. This surface-mount transistor comes in a square chip carrier package with 16 terminals.

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1 A; JESD-30 Code: O-MBCY-W3;

FMB3946 by Onsemi is a RF BJT transistor with NPN and PNP channels. It has 2 elements, 6 terminals, hFE of 30, max temp of 150°C, Vce of 40V, and fT of 200MHz. Ideal for switching applications due to its fast ton (38ns) and toff (190ns) times in a small outline package.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 43000 MHz; Maximum Collector Current (IC): .01 A; Transistor Element Material: SILICON GERMANIUM;