Analog Devices - HMC561LP3E

Analog Devices' HMC564LC4TR is a wide band low power RF amplifier with 14 dB gain, operating from 7-14 GHz. It has a max input power of 20 dBm and operates on a 3V supply, drawing up to 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND LOW POWER; Gain: 15.5 dB; Maximum Voltage Standing Wave Ratio: 1.2; Maximum Operating Frequency: 3600 MHz; Maximum Input Power (CW): 5 dBm; Characteristic Impedance: 50 ohm;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Terminal Finish: Matte Tin (Sn); Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND HIGH POWER; Maximum Operating Frequency: 8500 MHz; Minimum Operating Frequency: 5900 MHz; Maximum Input Power (CW): 29 dBm; Gain: 18 dB; Construction: COMPONENT;

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.

WIDE BAND MEDIUM POWER; JESD-609 Code: e3; Characteristic Impedance: 200 ohm; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Gain: 19.5 dB;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn); Power Supplies (V): 3;

WIDE BAND LOW POWER; Maximum Operating Frequency: 3600 MHz; Gain: 19.3 dB; Maximum Input Power (CW): 12 dBm; JESD-609 Code: e3; Minimum Operating Frequency: 40 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;

WIDE BAND LOW POWER; Additional Features: HIGH RELIABILITY; Gain: 16.5 dB; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 800 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 15 dBm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Frequency: 100 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.