Agilent Technologies - MGA-545P8-TR1G

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; JESD-609 Code: e0; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm; Maximum Voltage Standing Wave Ratio: 1.2;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 130 mA;

NXP Semiconductors' 935373852528 RF Amplifier operates in the 3200-4000 MHz range with a gain of 26.5 dB and can handle up to 28 dBm CW input power. This LDMOS component, with a VSWR of 10, is designed for narrowband high-power applications requiring a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Maximum Supply Current: 22 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND LOW POWER; Minimum Operating Frequency: 1500 MHz; Maximum Voltage Standing Wave Ratio: 2.5; Maximum Operating Frequency: 8000 MHz; Gain: 20 dB; Characteristic Impedance: 50 ohm;

HMC634LC4 by Analog Devices is a wide band low power RF amplifier with 17 dB gain, operating frequency range of 5-20 GHz. It features a max input power of 10 dBm, ceramic package body material, and gold over nickel terminal finish. Ideal for applications requiring high-frequency amplification in RF and microwave systems.

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 1000 MHz; Minimum Operating Frequency: 800 MHz; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -45 Cel; Additional Features: HIGH RELIABILITY;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Maximum Operating Frequency: 1100 MHz; Power Supplies (V): 3.8;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 13 dB; Characteristic Impedance: 50 ohm;

SPF5043ZSQ by Qorvo is a GAAS RF amplifier with 11.4 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 25 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband low-power applications requiring surface mount technology.

WIDE BAND HIGH POWER; Maximum Input Power (CW): 25 dBm; JESD-609 Code: e3; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Gain: 15 dB;

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 1000 MHz; Maximum Voltage Standing Wave Ratio: 1.22; Characteristic Impedance: 50 ohm; Construction: COMPONENT;