Broadcom - MGA-86576-STR

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

WIDE BAND HIGH POWER;

XB1007-QT-0G0T by M/a-com Technology Solutions is a GAAS wide band medium power RF amplifier with a gain of 23 dB. It operates at frequencies ranging from 4000 MHz to 11000 MHz and can handle a max input power of 20 dBm. This surface mount component is suitable for applications in RF and microwave amplification.

NARROW BAND MEDIUM POWER; JESD-609 Code: e3; Maximum Operating Frequency: 2800 MHz; Maximum Input Power (CW): 17 dBm; Characteristic Impedance: 50 ohm; Terminal Finish: Matte Tin (Sn);

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3/5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 13 dBm; Maximum Operating Temperature: 85 Cel;

GRF2071 by Guerrilla Rf is a PHEMT technology RF amplifier with 18 dB gain, operating from 700 MHz to 2700 MHz. It has a max input power of 23 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40°C to 105°C.

Analog Devices' HMC902LP3ETR is a wide band low power RF amplifier with 17 dB gain, operating from 5-10 GHz. It has a max input power of 10 dBm and operates on a 3.5V supply, making it ideal for RF & microwave applications requiring high performance in a compact package.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;

NARROW BAND MEDIUM POWER; Gain: 16.5 dB; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; JESD-609 Code: e3; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 9.2 dB; Maximum Input Power (CW): 20 dBm; Package Equivalence Code: SOT-343R;

NARROW BAND LOW POWER; Terminal Finish: TIN LEAD; Maximum Voltage Standing Wave Ratio: 1.65; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; JESD-609 Code: e0;

WIDE BAND LOW POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.