RF Power Field Effect Transistors (FET)

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Part	Manufacturer	Polarity or Channel Type	Configuration	Surface Mount	Maximum Power Dissipation (Abs)	Package Body Material	Transistor Application	Minimum DS Breakdown Voltage	Minimum Power Gain (Gp)	Terminal Form	Package Shape	Operating Mode	No. of Elements	Highest Frequency Band	Maximum Drain Current (Abs) (ID)	No. of Terminals	Package Style (Meter)	Sub-Category	Field Effect Transistor Technology	Maximum Power Dissipation Ambient	Maximum Operating Temperature	Transistor Element Material	Minimum Operating Temperature	Terminal Finish	Maximum Drain-Source On Resistance	Maximum Drain Current (ID)	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Additional Features	JEDEC-95 Code	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Feedback Capacitance (Crss)	Reference Standard
BLF878,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	300 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	89 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE	Not Qualified	HIGH RELIABILITY			30	260
FLC107WG	Fujitsu	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED		15 V		FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLANGE MOUNT	Other Transistors	JUNCTION	7.5 W	175 Cel	GALLIUM ARSENIDE					DUAL	R-CDFM-F2		SOURCE	Not Qualified	HIGH RELIABILITY
PTVA101K02EVV1R250XTMA1	Infineon Technologies	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
PD54003-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	52.8 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON				4 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
MRFE6S9045NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	66 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND		2	FLATPACK	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDFP-F2	3	SOURCE	Not Qualified		TO-270	e3	40	260
CLF1G0035S-100	NXP Semiconductors
MRF300AN	NXP Semiconductors																																		40	260
CGHV1F025S	Wolfspeed																																		NOT SPECIFIED	NOT SPECIFIED
AFM907NT1	NXP Semiconductors																												3						40	260
CGH40010P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	120 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND		2	FLATPACK	FET RF Small Signal	HIGH ELECTRON MOBILITY		105 Cel	GALLIUM NITRIDE					DUAL	R-CDFP-F2		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF300AN-81MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED
A2T08VD021NT1	NXP Semiconductors																							Tin (Sn)					3					e3	40	260
BLF175	NXP Semiconductors	N-CHANNEL	SINGLE	NO	68 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	4 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	68 W	200 Cel	SILICON			1.5 ohm	4 A	RADIAL	O-CRFM-F4	NOT APPLICABLE	ISOLATED	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
CG2H40010P	Wolfspeed	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	84 V	15 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	C BAND		2	FLATPACK		HIGH ELECTRON MOBILITY		150 Cel	GALLIUM NITRIDE	-40 Cel			1.5 A	DUAL	R-CDFP-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED	.186 pF
D1007UK	Tt Electronics Plc	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	70 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		GOLD			DUAL	R-CDFM-F4		SOURCE	Not Qualified	LOW NOISE		e4
SD2932W	STMicroelectronics	N-CHANNEL	SINGLE		500 W								1		40 A			FET General Purpose Powers	METAL-OXIDE SEMICONDUCTOR		200 Cel					40 A									NOT SPECIFIED	NOT SPECIFIED
FLU35XM	Fujitsu	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED		15 V		FLAT	RECTANGULAR	DEPLETION MODE	1	L BAND		4	MICROWAVE	Other Transistors	JUNCTION	15 W	175 Cel	GALLIUM ARSENIDE					QUAD	R-CQMW-F4		SOURCE	Not Qualified	HIGH RELIABILITY
GS66508T-TR	Gan Systems	N-CHANNEL	SINGLE	YES		UNSPECIFIED	SWITCHING	650 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR		150 Cel	GALLIUM NITRIDE	-55 Cel	Gold (Au) - with Nickel (Ni) barrier		30 A	BOTTOM	R-XBCC-N4	3	SOURCE				e4	30	260
GS66516B-MR	Gan Systems	P-CHANNEL	SINGLE	YES		UNSPECIFIED	SWITCHING	650 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		6	CHIP CARRIER		METAL-OXIDE SEMICONDUCTOR			SILICON		GOLD OVER NICKEL		60 A	BOTTOM	R-XBCC-N6	3	SOURCE				e4	30	260
RD15HVF1-101	Mitsubishi Electric	N-CHANNEL	SINGLE	NO	48 W	PLASTIC/EPOXY	AMPLIFIER	30 V		THROUGH-HOLE	RECTANGULAR	DEPLETION MODE	1	ULTRA HIGH FREQUENCY BAND	4 A	3	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				4 A	SINGLE	R-PSFM-T3		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
934066857112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	SWITCHING	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFP-F4		SOURCE		ESD PROTECTED, HIGH RELIABILITY
A5G35S004NT6	NXP Semiconductors																												3						40	260
ATF-50189-BLK	Broadcom	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	7 V	14 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	1	C BAND	1 A	3	SMALL OUTLINE	FET RF Small Signal	HIGH ELECTRON MOBILITY		150 Cel	SILICON		TIN		1 A	SINGLE	R-PSSO-F3	2		Not Qualified	LOW NOISE	MO-229	e3		260
BLF246,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				13 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified	LOW NOISE
MRF6V10010NR4	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	100 V		NO LEAD	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		4	CHIP CARRIER	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON		TIN			QUAD	R-PQCC-N4	3	SOURCE	Not Qualified			e3	40	260
NPTB00025B	M/a-com Technology Solutions																																		NOT SPECIFIED	NOT SPECIFIED
A2I25D025NR1	NXP Semiconductors																							TIN					3					e3	40	260
AFT05MP075NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	690 W								1					FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel			TIN					3					e3	40	260
BLL6H0514-25,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	100 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	L BAND	2.5 A	2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		150 Cel	SILICON				2.5 A	DUAL	R-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED		IEC-60134
MRF300AN-230MHZ	NXP Semiconductors																																		NOT SPECIFIED	NOT SPECIFIED
MRF8HP21130HSR3	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	S BAND		4	FLATPACK		METAL-OXIDE SEMICONDUCTOR			SILICON					DUAL	R-CDFP-F4	NOT APPLICABLE	SOURCE	Not Qualified				40	260
AFT09MS015NT1	NXP Semiconductors																							TIN					3					e3	40	260
MGF2430A-01	Mitsubishi Electric	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER		5.5 dB	FLAT	RECTANGULAR	DEPLETION MODE	1	KU BAND		2	FLANGE MOUNT		METAL SEMICONDUCTOR	5 W	175 Cel	GALLIUM ARSENIDE				.8 A	DUAL	R-CDFM-F2		SOURCE	Not Qualified
PTVA101K02EV-V1-R0	Wolfspeed	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	105 V	17 dB	FLAT	RECTANGULAR	ENHANCEMENT MODE	2	L BAND		4	FLANGE MOUNT		METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON					DUAL	R-CDFM-F4		SOURCE					NOT SPECIFIED	NOT SPECIFIED
BLF861A,112	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	318 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	18 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				18 A	DUAL	R-CDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
CGH40006S	Wolfspeed	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	120 V		NO LEAD	SQUARE	ENHANCEMENT MODE	1	C BAND		6	SMALL OUTLINE		HIGH ELECTRON MOBILITY			GALLIUM NITRIDE					DUAL	S-PDSO-N6			Not Qualified				NOT SPECIFIED	NOT SPECIFIED
PD55035STR-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	95 W	PLASTIC/EPOXY	AMPLIFIER	40 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	7 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON				7 A	DUAL	R-PDSO-F2		SOURCE	Not Qualified	HIGH RELIABILITY			NOT SPECIFIED	NOT SPECIFIED
T2G6003028-FL	Qorvo																												3
SD2932	STMicroelectronics	N-CHANNEL	SINGLE	YES	500 W	PLASTIC/EPOXY		125 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	40 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				40 A	DUAL	R-PDFM-F4		SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
BLF177,112	NXP Semiconductors	N-CHANNEL	SINGLE	YES	220 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	125 V		FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	16 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	220 W	200 Cel	SILICON			.3 ohm	16 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified
BLF245	NXP Semiconductors	N-CHANNEL	SINGLE	NO	68 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	13 dB	FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	6 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	68 W	200 Cel	SILICON			.75 ohm	6 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
BLF245,112	NXP Semiconductors	N-CHANNEL	SINGLE	NO	68 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V	13 dB	FLAT	ROUND	ENHANCEMENT MODE	1	VERY HIGH FREQUENCY BAND	6 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR	68 W	200 Cel	SILICON			.75 ohm	6 A	RADIAL	O-CRFM-F4		ISOLATED	Not Qualified	LOW NOISE			NOT SPECIFIED	NOT SPECIFIED
BLF861A	NXP Semiconductors	N-CHANNEL	COMMON SOURCE, 2 ELEMENTS	YES	318 W	CERAMIC, METAL-SEALED COFIRED	AMPLIFIER	65 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	2	ULTRA HIGH FREQUENCY BAND	18 A	4	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		200 Cel	SILICON				18 A	DUAL	R-CDFM-F4	NOT APPLICABLE	SOURCE	Not Qualified				NOT SPECIFIED	NOT SPECIFIED
MRF6S20010NR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES		PLASTIC/EPOXY	AMPLIFIER	68 V		FLAT	RECTANGULAR	ENHANCEMENT MODE	1	S BAND		2	FLANGE MOUNT	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDFM-F2	3	SOURCE	Not Qualified		TO-270AA	e3	40	260
TGF2978-SM	Qorvo																							Nickel/Palladium/Gold (Ni/Pd/Au)										e4	30	260
MW6S010GNR1	NXP Semiconductors	N-CHANNEL	SINGLE	YES	61.4 W	PLASTIC/EPOXY	AMPLIFIER	68 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	L BAND		2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		225 Cel	SILICON		TIN			DUAL	R-PDSO-G2	3	SOURCE	Not Qualified		TO-270BA	e3	40	260
PD54008-E	STMicroelectronics	N-CHANNEL	SINGLE	YES	73 W	PLASTIC/EPOXY	AMPLIFIER	25 V		GULL WING	RECTANGULAR	ENHANCEMENT MODE	1	ULTRA HIGH FREQUENCY BAND	5 A	2	SMALL OUTLINE	FET General Purpose Power	METAL-OXIDE SEMICONDUCTOR		165 Cel	SILICON		MATTE TIN		5 A	DUAL	R-PDSO-G2		SOURCE	Not Qualified	HIGH RELIABILITY		e3
QPD1008L	Qorvo	N-CHANNEL	SINGLE	YES		CERAMIC, METAL-SEALED COFIRED	AMPLIFIER			FLAT	RECTANGULAR	DEPLETION MODE	1	S BAND		2	FLANGE MOUNT		HIGH ELECTRON MOBILITY		85 Cel	GALLIUM NITRIDE	-40 Cel				DUAL	R-CDFM-F2		SOURCE					NOT SPECIFIED	NOT SPECIFIED

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.